Photodiode array and production method thereof, and radiation detector

ABSTRACT

A photodiode array  1  is provided with an n-type silicon substrate  3 . A plurality of photodiodes  4  are formed in array on the opposite surface side to an incident surface of light L to be detected, in the n-type silicon substrate  3 . A resin film  6  for transmitting the light L to be detected is provided so as to cover at least regions corresponding to regions where the photodiodes  4  are formed, on the incident surface side of the light L to be detected, in the n-type silicon substrate  3.

TECHNICAL FIELD

The present invention relates to a photodiode array and productionmethod thereof, and to a radiation detector.

BACKGROUND ART

The photodiode arrays of this type conventionally known includeback-illuminated photodiode arrays of a type in which light is incidentthrough the opposite surface (back surface) to a surface where bumpelectrodes or the like are formed (e.g., reference is made to PatentDocument 1). The photodiode array disclosed in this Patent Document 1has photodiodes 140 of pn junctions made by forming p-layers 134 ofprismatic shape in an n-type silicon substrate 133, as shown in FIGS. 25and 26. A scintillator 131 is bonded through a negative electrode film136 to the back surface (the upper side in the drawing) opposite to thesurface where the photodiodes 140 are formed (the lower side in thedrawing). When light resulting from wavelength conversion in thescintillator 131 is incident into the photodiodes 140, each of thephotodiodes 140 generates an electric current according to the incidentlight. The electric current generated in each photodiode 140 isoutputted through positive electrode 135 formed on the front surfaceside, solder ball 139, and solder pad 138 provided on printed circuitboard 137.

[Patent Document 1] Japanese Patent Application Laid-Open No. 7-333348

DISCLOSURE OF THE INVENTION

Incidentally, for mounting of the aforementioned photodiode array, e.g.,a photodiode array for CT, a flat collet or a pyramid collet can be usedas a collet for holding a chip under suction. The flat collet isnormally used for flip chip bonding. The CT photodiode array has a largechip area (e.g., the square shape of 20 mm on each side). Where thepyramid collet 161 used in an ordinary mounter is used as shown in FIG.24B, chip 162 will warp due to clearance 163 between chip 162 andpyramid collet 161. For this reason, in the case where the pyramidcollet 161 is used, the warpage could cause positional misalignment anddegrade the mounting accuracy of chip 162. The flip chip bonding processrequires application of heat and pressure, but the efficiency of thermalconduction is poor in use of the pyramid collet 161. The pressureapplied could damage the edge of chip 162. From the above it followsthat the pyramid collet 161 is not suitable for suction holding of athin chip. Therefore, in the case of the flip chip bonding, as shown inFIG. 24A, flat collet 160 to achieve surface contact with the chipsurface is used to hold the chip 162 under suction, and the heat andpressure from heater block 164 is applied to the chip 162.

However, the use of the flat collet 160 results in bringing the entirechip surface of the chip 162 into contact with the flat collet 160. Ifthe entire chip surface to become the light-incident surface is incontact with the flat collet 160 to be exposed to pressure and heat,regions corresponding to impurity diffused layers forming thephotodiodes, on the chip surface could suffer physical damage. Thedamage on the chip surface will pose problems of appearance failure andcharacteristic degradation (increase in dark current and noise or thelike).

The present invention has been accomplished in view of theabove-described respects and an object of the invention is to provide aphotodiode array and production method thereof capable of preventing thecharacteristic degradation while preventing the damage on the regionscorresponding to the photodiodes during mounting, and to provide aradiation detector.

In order to achieve the above object, a photodiode array according tothe present invention is a photodiode array comprising a semiconductorsubstrate, wherein a plurality of photodiodes are formed in array on anopposite surface side to an incident surface of light to be detected, inthe semiconductor substrate, and wherein a resin film for transmittingthe light to be detected is provided so as to cover at least regionscorresponding to regions where the photodiodes are formed, on a side ofthe incident surface of the light to be detected, in the semiconductorsubstrate.

In the photodiode array according to the present invention, in the caseof the flat collet being used during mounting, the resin film isinterposed between the flat collet and the regions corresponding to theregions where the photodiodes are formed. For this reason, the regionscorresponding to the regions where the photodiodes are formed are keptout of direct contact with the flat collet to be prevented from beingdamaged by pressure and heat. In consequence, it is feasible toeffectively prevent the characteristic degradation due to noise, darkcurrent, and so on.

Preferably, a plurality of depressions having a predetermined depth areformed in array on the opposite surface side to the incident surface ofthe light to be detected, in the semiconductor substrate, and eachphotodiode is formed in a bottom portion of the associated depression.In this case, the distance becomes shorter between the incident surfaceof the light to be detected and the photodiodes in the semiconductorsubstrate, and thus recombination of carriers is suppressed in migrationof carriers generated with incidence of the light to be detected. Thisresults in improving photodetecting sensitivity.

The resin film is provided so as to cover the entire incident surface ofthe light to be detected, in the semiconductor substrate. In this case,the resin film can be readily formed and this can facilitate productionsteps.

Preferably, the semiconductor substrate is provided with an impurityregion between the photodiodes adjacent to each other, for separatingthe photodiodes from each other. In this case, the impurity regionprevents occurrence of surface leak, and thus adjacent photodiodes canbe electrically separated from each other with certainty.

Preferably, a high-impurity-concentration layer of the same conductivitytype as the semiconductor substrate is formed on the incident surfaceside of the light to be detected, in the semiconductor substrate. Inthis case, carriers generated near the light-incident surface inside thesemiconductor substrate efficiently migrate into each photodiode,without being trapped. This results in enhancing the photodetectingsensitivity.

A photodiode array production method according to the present inventionis a method of producing a photodiode array, the method comprising: astep of preparing a semiconductor substrate comprised of a semiconductorof a first conductivity type; a step of forming a plurality of impuritydiffused layers of a second conductivity type on one surface side of thesemiconductor substrate to form a plurality of photodiodes eachcomprised of the impurity diffused layer and the semiconductorsubstrate, in array; and a step of providing a resin film fortransmitting light to which the photodiodes are sensitive, so as tocover at least regions corresponding to regions where the photodiodesare formed, on another surface of the semiconductor substrate.

The photodiode array production method according to the presentinvention permits us to obtain the photodiode array wherein thephotodiodes are formed in array on one surface of the semiconductorsubstrate and wherein the resin film is provided at least in the regionscorresponding to the regions where the photodiodes are formed, on theother surface.

Another photodiode array production method according to the presentinvention is a method of producing a photodiode array, the methodcomprising: a step of preparing a semiconductor substrate comprised of asemiconductor of a first conductivity type; a step of forming aplurality of depressions in array on one surface side of thesemiconductor substrate; a step of forming a plurality of impuritydiffused layers of a second conductivity type in bottom portions of thedepressions to form a plurality of photodiodes each comprised of theimpurity diffused layer and the semiconductor substrate, in array; and astep of providing a resin film for transmitting light to which thephotodiodes are sensitive, so as to cover at least regions correspondingto regions where the photodiodes are formed, on another surface of thesemiconductor substrate.

The photodiode array production method according to the presentinvention permits us to obtain the photodiode array wherein thephotodiodes are formed in array in the bottom portions of thedepressions formed on one surface of the semiconductor substrate andwherein the resin film is provided at least in the regions correspondingto the regions where the photodiodes are formed, on the other surface.

Preferably, the method further comprises a step of forming ahigh-impurity-concentration layer of the first conductivity type on theother surface of the semiconductor substrate, prior to the step ofproviding the resin film. In this case, the high-impurity-concentrationlayer of the same conductivity type as the semiconductor substrate isformed on the other surface of the semiconductor substrate. For thisreason, carriers generated near the light-incident surface inside thesemiconductor substrate efficiently migrate into each photodiode,without being trapped. This results in enhancing the photodetectingsensitivity.

Preferably, the method further comprises a step of providing an impurityregion of the first conductivity type between the impurity diffusedlayers adjacent to each other. In this case, the method permits us toobtain the photodiode array wherein the photodiodes adjacent to eachother are electrically separated from each other with certainty.

A radiation detector according to the present invention is a radiationdetector comprising: the above-described photodiode array; and ascintillator panel arranged opposite to the incident surface of thelight to be detected, in the photodiode array, and arranged to emitlight with incidence of radiation.

Another radiation detector according to the present invention is aradiation detector comprising: the photodiode array produced by theabove-described photodiode array production method; and a scintillatorpanel arranged opposite to the surface where the resin film is providedin the photodiode array, and arranged to emit light with incidence ofradiation.

Since each of these radiation detectors according to the presentinvention comprises the above-described photodiode array, it is feasibleto effectively prevent the characteristic degradation due to noise, darkcurrent, and so on.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view showing a sectional configuration of a photodiode arrayaccording to the first embodiment.

FIG. 2 is a view for explaining the configuration of the photodiodearray according to the first embodiment.

FIG. 3 is a view for explaining a production step of the photodiodearray according to the first embodiment.

FIG. 4 is a view for explaining a production step of the photodiodearray according to the first embodiment.

FIG. 5 is a view for explaining a production step of the photodiodearray according to the first embodiment.

FIG. 6 is a view for explaining a production step of the photodiodearray according to the first embodiment.

FIG. 7 is a view for explaining a production step of the photodiodearray according to the first embodiment.

FIG. 8 is a view for explaining a production step of the photodiodearray according to the first embodiment.

FIG. 9 is a view for explaining a production step of the photodiodearray according to the first embodiment.

FIG. 10 is a view for explaining a production step of the photodiodearray according to the first embodiment.

FIG. 11 is a view for explaining a production step of the photodiodearray according to the first embodiment.

FIG. 12 is a view showing a sectional configuration of a modificationexample of the photodiode array according to the first embodiment.

FIG. 13 is a view showing a sectional configuration of a photodiodearray according to the second embodiment.

FIG. 14 is a view for explaining the configuration of the photodiodearray according to the second embodiment.

FIG. 15 is a view for explaining a production step of the photodiodearray according to the second embodiment.

FIG. 16 is a view for explaining a production step of the photodiodearray according to the second embodiment.

FIG. 17 is a view for explaining a production step of the photodiodearray according to the second embodiment.

FIG. 18 is a view for explaining a production step of the photodiodearray according to the second embodiment.

FIG. 19 is a view for explaining a production step of the photodiodearray according to the second embodiment.

FIG. 20 is a view for explaining a production step of the photodiodearray according to the second embodiment.

FIG. 21 is a view for explaining a production step of the photodiodearray according to the second embodiment.

FIG. 22 is a view showing a sectional configuration of a radiationdetector according to the third embodiment.

FIG. 23 is a view showing a sectional configuration of a radiationdetector according to the fourth embodiment.

FIG. 24A is a view schematically showing a state in which a flat colletholds a semiconductor chip under suction.

FIG. 24B is a view schematically showing a state in which a pyramidcollet holds a semiconductor chip under suction.

FIG. 25 is a perspective view showing a photodiode array according tothe conventional technology.

FIG. 26 is a schematic diagram showing a sectional configuration alongdirection XXVI-XXVI in FIG. 25.

BEST MODE FOR CARRYING OUT THE INVENTION

The preferred embodiments of the photodiode array and production methodthereof, and the radiation detector according to the present inventionwill be described below in detail with reference to the drawings. Thesame elements, or elements with the same functionality will be denotedby the same reference symbols in the description, without redundantdescription.

First Embodiment

FIG. 1 is a view showing a sectional configuration of photodiode array 1according to an embodiment of the present invention. In the descriptionhereinafter, the incident surface of light L (the upper surface inFIG. 1) will be referred to as a back surface, and the opposite surface(the lower surface in FIG. 1) to it as a front surface. It is noted thatthe dimensions in each drawing below are altered as occasion may demand,for convenience' sake of illustration.

The photodiode array 1 has a plurality of photodiodes 4 comprised of pnjunctions. The plurality of photodiodes 4 are two-dimensionally arrangedin a vertically and horizontally regular array on the front surface sideof the photodiode array 1. Each photodiode 4 functions as a pixel ofphotodiode array 1 and the photodiodes 4 as a whole constitute onephotosensitive region.

The photodiode array 1 has an n-type (first conductivity type) siliconsubstrate 3. The thickness of the n-type silicon substrate 3 isapproximately 30-300 μm (preferably, 100 μm). The impurity concentrationin the n-type silicon substrate 3 is approximately 1×10¹²-10¹⁵/cm³.P-type (second conductivity type) impurity diffused layers 5 aretwo-dimensionally arranged in a vertically and horizontally regulararray on the front surface side of the n-type silicon substrate 3. Thethickness of the p-type impurity diffused layers 5 is approximately0.05-20 μm (preferably, 0.2 μm). The impurity concentration in thep-type impurity diffused layers 5 is approximately 1×10¹³-10²⁰/cm³. Thepn junctions formed of the p-type impurity diffused layers 5 and then-type silicon substrate 3 constitute the photodiodes 4. A silicon oxidefilm 22 is formed on the front surface of the n-type silicon substrate3. A passivation film 2 is formed on this silicon oxide film 22. Thepassivation film 2 is made, for example, of SiN or the like.

Electrode wirings 9 are formed corresponding to the respective p-typeimpurity diffused layers 5 (photodiodes 4), on the silicon oxide film22. Each electrode wiring 9 is made of aluminum and has the thickness ofabout 1 μm. One end of each electrode wiring 9 is electrically connectedthrough a contact hole formed in the silicon oxide film 22, to thecorresponding p-type impurity diffused layer 5. The other end of eachelectrode wiring 9 is electrically connected through a contact holeformed in the passivation film 2, to a corresponding under bump metal(UBM) 11. A bump electrode 12 of solder is formed on each UBM 11. TheUBM 11 and bump electrode 12 are electrically connected to each other.

The UBM 11 is preferably one achieving strong interface bonding tosolder and being capable of preventing diffusion of a solder componentinto aluminum, and is often constructed in multilayer structure. Anexample of this multilayer structure is nickel (Ni)-gold (Au) byelectroless plating. This structure is obtained by depositing a thicknickel plated layer (3-15 μm) on an aluminum-exposed region anddepositing a thin gold plated layer (0.05-0.1 μm) thereon. The goldlayer is provided for preventing oxidation of nickel. Other availablestructures include multilayer structures of titanium (Ti)-platinum(Pt)-gold (Au) and chromium (Cr)-gold (Au) formed by liftoff.

An accumulation layer 8 as a high-impurity-concentration layer isprovided on the back surface side of the n-type silicon substrate 3. Theaccumulation layer 8 is formed in a substantially uniform depth acrossalmost all the back surface. The accumulation layer 8 has the sameconductivity type as the n-type silicon substrate 3 and the impurityconcentration thereof is higher than that of the n-type siliconsubstrate 3. The photodiode array 1 of the present embodiment has theaccumulation layer 8, but the photodiode array has the photodetectingsensitivity at a practically acceptable level, without provision of theaccumulation layer 8.

An AR film 24 is formed on the accumulation layer 8, in order to coverand protect the accumulation layer 8 and to suppress reflection of lightL. The AR film 24 is made, for example, of SiO₂ and has the thickness ofabout 0.01 to several μm. The AR film 24 may be formed in a multilayeror complex structure with SiN or with an optical film capable ofpreventing reflection at a desired wavelength, in addition to SiO₂.

On the front surface side of the n-type silicon substrate 3, a regionwhere each p-type impurity diffused layer 5 exists is a region where aphotodiode 4 is formed (hereinafter referred to as a “formed region”),and the region except for the formed regions constitutes a region wherethe photodiodes are not formed. A resin film 6 is provided so as tocover at least regions corresponding to the formed regions of therespective photodiodes 4 (the regions will be referred to hereinafter as“corresponding regions”), on AR film 24. The resin film 6 is made of aresin material that transmits light to be detected (light to which thephotodiodes 4 are sensitive) L. In the present embodiment, the resinfilm 6 covers the entire AR film 24.

An n⁺-type impurity region 7 is provided between adjacent p-typeimpurity diffused layers 5, i.e., between adjacent photodiodes 4 in then-type silicon substrate 3. The thickness of the n⁺-type impurity region7 is approximately 0.1-several ten μm. The n⁺-type impurity region 7functions as a separating layer for electrically separating adjacentphotodiodes 4 (p-type impurity diffused layers 5) from each other. Thiscan securely electrically separate adjacent photodiodes 4 from eachother and reduce crosstalk between photodiodes 4. The photodiode array 1in the present embodiment, without the n⁺-type impurity region 7,possesses the photodetecting characteristics at a practically acceptablelevel.

The photodiode array 1 is of extremely thin plate shape, as shown inFIG. 2. The width W1 of photodiode array 1 is approximately 22.4 mm, andthe thickness D of photodiode array 1 approximately 0.3 mm. Thephotodiode array 1 has a number of aforementioned photodiodes 4 (e.g., atwo-dimensional array of 256 (16×16) photodiodes). The pitch W2 betweenadjacent photodiodes 4 (pixels) is approximately 1.4 mm. The photodiodearray 1 is a chip of a large area (e.g., 22.4 mm×22.4 mm). The topillustration in FIG. 2 is one for showing how thin the photodiode array1 is, and the details of the photodiode array 1 are illustrated inenlarged views.

In the photodiode array 1, when light L is incident on the back surface,the incident light L passes through the resin layer 6 and theaccumulation layer 8 to reach the pn junctions. Then each photodiode 4generates carriers according to the incident light. At this time, theaccumulation layer 8 prevents the carriers generated near thelight-incident surface (back surface) inside the n-type siliconsubstrate 3 from being trapped at the light-incident surface and theinterface to the AR film 24. This permits the carriers to efficientlymigrate to the pn junctions and thus enhances the photodetectingsensitivity of the photodiode array 1. A photocurrent caused bygenerated carriers is extracted through electrode wiring 9 and UBM 11connected to each p-type impurity diffused layer 5, and from bumpelectrode 12. The incident light is detected based on the output fromthe bump electrode 12.

In the present embodiment, as described above, the resin film 6 capableof covering the corresponding regions of the respective photodiodes 4 isprovided on the incident surface side of the light L (i.e., the backsurface side) in the photodiode array 1. In the case where the flip chipbonding is carried out with the photodiode array 1 being held in suctionby the flat collet, the resin film 6 is brought into contact with theflat collet to be located between the flat collet and the correspondingregions of the respective photodiodes 4. In this configuration, thecorresponding regions of the respective photodiodes 4 are protected bythe resin film 6 so as to be kept out of direct contact with the flatcollet. Therefore, the corresponding regions of the respectivephotodiodes 4 get rid of direct stress due to pressure and direct stressdue to heat, so that the accumulation layer 8 in the correspondingregions is prevented from suffering physical damage. The photodiodes 4are thus free of the dark current and noise caused by crystal defects orthe like due to such damage. In consequence, the photodiode array 1 isable to perform photodetection with high accuracy (at high S/N ratios).

As described later, the resin film 6 can function as a cushion layercapable of protecting the corresponding regions of the respectivephotodiodes 4. This also permits the resin film 6 to absorb physicalimpact in holding the photodiode array in suction on the flat collet.

In cases except for the flip chip bonding, e.g., in a case where thephotodiode array 1 is integrated with a scintillator to be used as a CTsensor, as described later, the scintillator is kept out of directcontact with the corresponding regions, and it is thus feasible to avoiddamage during mounting of the scintillator.

Incidentally, the necessary condition for resin film 6 is that the resinfilm 6 is provided in the range where it can cover at least the entirecorresponding regions of the photodiodes 4. As long as this condition ismet, the resin film 6 of a single layer may be provided so as to coverthe entire corresponding regions of the photodiodes 4. In anotherconfiguration, a plurality of resin films 6 are provided correspondingto the corresponding regions of the photodiodes 4 and missing portions 6a without the resin film 6 may exist in the region not corresponding tothe formed regions of the photodiodes 4 (the region not correspondingwill be referred to hereinafter as a “noncorresponding region”) (cf.FIG. 12). It is, however, preferable to provide the single-layer resinfilm 6 so as to cover the entire corresponding regions of thephotodiodes 4, in terms of simplifying the production steps (which willbe detailed later).

The resin film 6 is placed as a protecting film for the entirecorresponding regions of the photodiodes 4, on the incident surfaceside. Therefore, the resin film 6 is made of a light transmitting resinthat is capable of transmitting light detected by 4 (light to bedetected, e.g., fluorescence generated by scintillator panel 31 asdescribed later) and optically transparent to the light to be detected;for example, such resins as epoxy resin, polyimide resin, acrylateresin, silicone resin, fluororesin, and urethane resin. The resin layer6 is in direct contact with the flat collet during the flip chip bondingto be exposed to pressure and heat. Therefore, the resin layer 6 ispreferably made of a material capable of protecting the correspondingregions of the respective photodiodes 4 from the pressure and heat. Inthis case, for example, the resin preferably has the coefficient ofthermal expansion of approximately 1×10⁻⁶-1×10⁻⁴/° C., the elasticmodulus of approximately 10-12000 kg/cm2, and the thermal conductivityof 0.2-1.85 W/m° C. The resin layer 6 is preferably formed in athickness in which impurity ions are kept from diffusing into thephotodiodes 4 with application of heat and in which at least light fromscintillator panel 31 described later can be absorbed thereby(approximately 1-50 μm (preferably, 10 μm)).

Next, a production method of the photodiode array 1 according to thepresent embodiment will be described below on the basis of FIGS. 3 to11.

The first step is to prepare an n-type silicon substrate 3 having thethickness of about 150-500 μm (preferably, 350 μm), as shown in FIG. 3.Next, a silicon oxide film (SiO₂) 20 is formed on the front surface andon the back surface of the n-type silicon substrate 3 (cf. FIG. 4).

Next, the silicon oxide film 20 formed on the front surface of then-type silicon substrate 3 is patterned with a predetermined photomaskto form openings at intended positions for formation of the n⁺-typeimpurity regions 7. Then the n-type silicon substrate 3 is doped withphosphorus through the openings formed in the silicon oxide film 20, toprovide the n⁺-type impurity regions 7 in the n-type silicon substrate3. In the present embodiment, the n⁺-type impurity region 7 is alsoformed on the back surface side of the n-type silicon substrate 3. Thisstep (impurity region forming step) may be omitted if the n⁺-typeimpurity regions 7 are not provided. Subsequently, a silicon oxide film21 is again formed on the front surface and on the back surface of then-type silicon substrate 3 (cf. FIG. 5). This silicon oxide film 21 isused as a mask in the subsequent step of forming the p-type impuritydiffused layers 5.

Next, the silicon oxide film 21 formed on the front surface of then-type silicon substrate 3 is patterned with a predetermined photomaskto form openings at intended positions for formation of the respectivep-type impurity diffused layers 5. The substrate is doped with boronthrough the openings formed in the silicon oxide film 21, to form thep-type impurity diffused layers 5 in two-dimensional arrangement of avertical and horizontal array. This results in forming photodiodes 4 ofpn junctions between each p-type impurity diffused layer 5 and n-typesilicon substrate 3 in two-dimensional arrangement of a vertical andhorizontal array. Each photodiode 4 becomes a portion corresponding to apixel. Subsequently, a silicon oxide film 22 is again formed on thefront surface side of the substrate (cf. FIG. 6).

Next, the back surface of the n-type silicon substrate 3 is polished upto a predetermined thickness (about 30-300 μm) to obtain the n-typesilicon substrate 3 in thin shape (thin plate). Then an n-type ionspecies (e.g., phosphorus or arsenic) is allowed to diffuse from theback surface of the n-type silicon substrate 3 into the depth of about0.05 to several ten μm, thereby forming the aforementioned accumulationlayer 8 with the impurity concentration higher than that of the n-typesilicon substrate 3. Furthermore, thermal oxidation is carried out toform the AR film 24 on the accumulation layer 8 (cf. FIG. 7).

Next, contact holes extending to the respective p-type impurity diffusedlayers 5 are formed in the formed regions of the respective photodiodes4 and in the silicon oxide film 22 by the photoetching technology.Subsequently, an aluminum metal film is formed on the silicon oxide film22 by evaporation, and thereafter it is patterned with a predeterminedphotomask to form electrode wirings 9 (cf. FIG. 8).

Next, a resin such as epoxy resin, polyimide resin, acrylate resin,silicone resin, fluororesin, or urethane resin as a material of resinfilm 6 is applied onto the AR film 24, it is spread over the entiresurface by spin coating, screen printing, or the like, and it is curedto provide the resin film 6 (cf. FIG. 9). As this resin film 6 isprovided, it protects the corresponding regions of the respectivephotodiodes 4. In the case where the missing portions 6 a are formed inthe resin film 6, the applied resin is removed from the regions of themissing portions 6 a. In this case, the resin film also protects thecorresponding regions of the respective photodiodes 4.

After the formation of resin film 6, an SiN film 25 to become thepassivation film 2 is formed on the silicon oxide film 22 so as to coverthe electrode wirings 9. The SiN film 25 can be formed by sputtering,plasma CVD, or the like. The passivation film 2 may be one selected fromthe insulating films of SiO₂, PSG, BPSG, etc., polyimide resin, acrylateresin, epoxy resin, fluororesin, composite films and multilayer filmsthereof, and so on. The step of forming the passivation film 2 may becarried out before the formation of the resin film 6.

Next, contact holes are formed at predetermined positions in the SiNfilm 25 to make electrode extracting portions (cf. FIG. 10).Furthermore, the bump electrodes 12 are to be formed. Where the bumpelectrodes 12 are of solder, since the solder has poor wettability toaluminum, UBM 11 for intervention between each electrode extractingportion and bump electrode 12 is formed on each electrode extractingportion. Then the bump electrode 12 is formed over each UBM 11 (cf. FIG.11).

Through the above steps, the production method permits us to produce thephotodiode array 1 capable of performing photodetection with highaccuracy, without occurrence of noise due to damage in mounting.

The bump electrodes 12 can be made by placing solder on thepredetermined UBM 11 by the solder ball mounting method or printingmethod and reflowing the solder. The bump electrodes 12 are not limitedto the solder bumps, but may be gold bumps, nickel bumps, or copperbumps, or may be electroconductive resin bumps containing such metal asan electroconductive filler. The drawings show only the extraction ofthe anode electrodes, and the cathode (substrate) electrodes can also besimilarly extracted from the n⁺-type impurity regions 7 (though notshown) in the same manner as the anode electrodes. The drawings show thecase where the bump electrodes 12 of the anode electrodes are formed inthe areas of the n⁺-type impurity regions 7, but the bump electrodes 12of the anode electrodes may be formed in the areas of the p-typeimpurity diffused layers 5.

Second Embodiment

Next, the second embodiment of the photodiode array and productionmethod thereof will be described.

The present embodiment is directed to a photodiode array 41 having ann-type silicon substrate 43 in which depressions 45 are formed on theopposite surface side (front surface side) to the incident surface oflight L, as shown in FIG. 13. Since this photodiode array 41 has commonportions to the photodiode array 1, the description below will be givenwith focus on the differences between them, while omitting orsimplifying the description of the common portions.

In the photodiode array 41, a plurality of depressions 45 are formed intwo-dimensional arrangement of a vertically and horizontally regulararray on the front surface side of the n-type silicon substrate 43. Eachdepression 45 is made by recessing a predetermined region of the n-typesilicon substrate 43 so as to make it thinner than the region around it,and the depressions 45 are formed at arrangement intervals of about1.4-1.5 mm. The aforementioned photodiodes 4 are formed in respectivebottom portions 45 a of the depressions 45, thereby constituting thephotodiode array 41 in which the photodiodes 4 are two-dimensionallyarranged in array.

Each depression 45 is formed with a rectangular opening, for example, inthe size of about 1 mm×1 mm in the front surface of the n-type siliconsubstrate 43 so that the aperture size gradually decreases from theopening toward the bottom portion 45 a (i.e., from the front surfaceside toward the back surface side). In this configuration, eachdepression 45 has a slope side surface 45 b. The depth from the frontsurface of the n-type silicon substrate 43 to the bottom portion 45 ais, for example, about 50 μm.

Electrode wirings 9 are formed along side faces 45 b and on the siliconoxide film 22. One end of each electrode wiring 9 is electricallyconnected through a contact hole formed in the silicon oxide film 22, tothe corresponding p-type impurity diffused layer 5. The other end ofeach electrode wiring 9 is electrically connected through a contact holeformed in the passivation film 2, to the corresponding UBM 11. Ann⁺-type impurity region 7 is provided between adjacent photodiodes 4.

The accumulation layer 8 is formed on the entire back surface side ofthe n-type silicon substrate 3. The AR film 24 is formed on theaccumulation layer 8. This accumulation layer 8 and the AR film 24 aresimilar to those in the aforementioned photodiode array 1. Theaforementioned resin film 6 is provided in the corresponding region ofeach photodiode 4 on the AR film 24. The resin film 6 is also similar tothat in the aforementioned photodiode array 1.

The photodiode array 41 is of extremely thin plate shape as shown inFIG. 14. The width W1 of the photodiode array 41 is approximately 22.4mm, and the thickness D of photodiode array 41 150-300 μm. Thephotodiode array 41 has a number of such photodiodes 4 (e.g.,two-dimensional arrangement of 256 (16×16) photodiodes). The pitch W2between adjacent photodiodes 4 is approximately 1.4 mm. The photodiodearray 41 is a chip of a large area (e.g., 22.4 mm×22.4 mm). The topillustration in FIG. 14 is one showing how thin the photodiode array 41is, and the details of the photodiode array 41 are illustrated inenlarged views.

In the photodiode array 41 constructed as described above, when light Lis incident on the back surface, just as in the case of the photodiodearray 1, the incident light L passes through the resin film 6 and theaccumulation layer 8 to reach the pn junctions. Each photodiode 4generates carriers according to the incident light. Since each pnjunction is provided in the bottom portion 45 a of depression 45, thedistance is shorter between the back surface of the n-type siliconsubstrate 43 and the pn junction (e.g., approximately 10-100 μm).Therefore, the photodiode array 41 is configured to prevent a situationin which the carriers generated with incidence of light L annihilatethrough recombination in the process of migration. In consequence, thephotodiode array 41 is able to maintain high detection sensitivity.

The accumulation layer 8 permits the carriers generated near thelight-incident surface (back surface) inside the n-type siliconsubstrate 43 to efficiently migrate to the pn junctions, withoutrecombination. This permits the photodiode array 41 to have higherphotodetecting sensitivity (though the photodiode array 31 of thepresent embodiment has the detection sensitivity at a practicallyacceptable level, without provision of the accumulation layer 8).

A photocurrent caused by generated carriers is extracted throughelectrode wiring 9 and UBM 11 connected to each p-type impurity diffusedlayer 5, and from bump electrode 12. The incident light is detectedbased on the output from bump electrode 12. This is much the same as inthe case of the photodiode array 1.

As described above, the photodiode array 41 of the present embodiment isalso provided with the resin film 6 capable of covering thecorresponding regions of the respective photodiodes 4, on the incidentsurface side of the light L (i.e., the back surface side) in thephotodiode array 41 as the photodiode array 1 was. In the case where theflip chip bonding is carried out with the photodiode array 41 being heldin suction with the flat collet, the resin film 6 is brought intocontact with the flat collet to be located between the flat collet andthe corresponding regions of the respective photodiodes 4. In thisconfiguration, the resin film 6 protects the corresponding regions ofthe respective photodiodes 4, so that the corresponding regions are keptout of direct contact with the flat collet. Therefore, the correspondingregions of the photodiodes 4 get rid of direct stress due to pressureand direct stress due to heat, so that the accumulation layer 8 in thecorresponding regions is prevented from suffering physical damage. Inthe photodiodes 4 there is neither dark current nor noise caused bycrystal defects or the like due to such damage. In consequence, thephotodiode array 41 is able to perform photodetection with high accuracy(at high S/N ratios).

In cases except for the flip chip bonding, for example, in a case wherethe photodiode array 41 is integrated with a scintillator to be used asa CT sensor, as described later, the scintillator is kept out of directcontact with the corresponding regions and it is thus feasible to avoiddamage during mounting of the scintillator.

Next, a production method of the photodiode array 41 according to thepresent embodiment will be described on the basis of FIGS. 3 to 6 andFIGS. 15 to 21.

First, the steps described with FIGS. 3 to 6 are executed in the samemanner as in the case of the photodiode array 1. Next, the back surfaceof the n-type silicon substrate 3 is polished to make the n-type siliconsubstrate 3 thinner (into a thin plate) before the thickness of then-type silicon substrate 3 becomes a predetermined thickness.Subsequently, a silicon nitride film (SiN) 26 is formed on the frontsurface and on the back surface of the n-type silicon substrate 3 byLP-CVD (or plasma CVD), and thereafter the silicon oxide film 22 andsilicon nitride film 26 on the front surface side are patterned with apredetermined photomask to form openings at intended positions forformation of the respective depressions 45 (cf. FIG. 15).

Next, the p-type impurity diffused layer 5 and n-type silicon substrate3 are removed by alkali etching to form a depression 45 so as to leave aframe peripheral part 5 a of p-type impurity diffused layer 5, for eachtarget of a region where the p-type impurity diffused layer 5 is formed,in the front surface of the n-type silicon substrate 3. This results inobtaining an n-type silicon substrate 43. At this time, the frameperipheral part 5 a is formed as a region resulting from diffusion witha p-type impurity, in the edge part of the opening of each depression45. Each depression 45 comes to have a side face 45 b and a bottomportion 45 a. The frame peripheral part 5 a is not always essential.When the frame peripheral part 5 a is formed, it provides the effect ofpreventing noise and dark current due to damage in the edge part formedby etching for formation of the depressions 45. FIGS. 13, 14, and 23show the example without formation of the frame peripheral part 5 a.

Subsequently, the bottom portion 45 a of each depression 45 thus formedis doped with boron or the like. This results in forming a p-typeimpurity diffused layer 5 b in the bottom portion 45 a of eachdepression 45, and the photodiodes 4 comprised of pn junctions of suchp-type impurity diffused layers 5 b and n-type silicon substrate 43 areformed in two-dimensional arrangement of a vertical and horizontalarray. Then a silicon oxide film 22 is formed on the regions not coveredby the silicon nitride film 26 formed on the front surface (cf. FIG.16). At this time, though not shown, the silicon oxide film is alsoformed on the silicon nitride film 26 formed on the back surface.

Next, the silicon nitride film 26 formed on the back surface of n-typesilicon substrate 43 is removed and thereafter the accumulation layer 8with the impurity concentration higher than that of the n-type siliconsubstrate 43 is formed by ion implantation with an n-type ion species(e.g., phosphorus or arsenic). Furthermore, thermal oxidation isconducted to form the AR film 24 on the accumulation layer 8.Thereafter, the silicon nitride film 26 formed on the front surface ofthe n-type silicon substrate 43 is removed (cf. FIG. 17).

Then, in the formed region of each photodiode 4 a contact hole extendingup to each p-type impurity diffused layer 5 b is formed in the siliconoxide film 22 on the front surface side by photoetching technology.Subsequently, an aluminum metal film is formed on the silicon oxide film22 by evaporation and thereafter patterned with a predeterminedphotomask to form the electrode wirings 9 (cf. FIG. 18).

Next, the resin film 6 is provided on the AR film 24 in the same manneras in the first embodiment (cf. FIG. 19).

After the formation of resin film 6, an SiN film 25 to become thepassivation film 2 is formed on the silicon oxide film 22 so as to coverthe electrode wirings 9. The SiN film 25 can be formed by sputtering,plasma CVD, or the like. Subsequently, contact holes are formed atpositions corresponding to the respective electrode wirings 9 in the SiNfilm 25 (cf. FIG. 20). Subsequently, the UBM 11 electrically connectedwith each electrode wiring 9 through the contact hole is formed byelectroless plating or the like in the same manner as in the firstembodiment. Then the bump electrode 12 is formed over each UBM 11 (cf.FIG. 21).

Through the above steps, the production method permits us to produce thephotodiode array 41 capable of performing photodetection with highaccuracy, without occurrence of the noise and dark current due to damageduring mounting. The drawings show only the extraction of the anodeelectrodes, but the cathode (substrate) electrodes can also be extractedfrom the n⁺-type impurity regions 7 (though not shown) in the samemanner as the anode electrodes.

Third Embodiment

Next, a radiation detector according to the third embodiment will bedescribed.

FIG. 22 is a view showing a sectional configuration of radiationdetector 50 according to the present embodiment. This radiation detector50 has a scintillator panel 31 arranged to emit light with incidence ofradiation, and the aforementioned photodiode array 1. The scintillatorpanel 31 emits light generated with incident radiation, from its lightexit surface 31 a. The scintillator panel 31 is arranged opposite to thelight-incident surface of photodiode array 1, i.e., opposite to thesurface with the resin film 6 in the photodiode array 1. When the lightemerging from the light exit surface 31 a of scintillator panel 31 isincident on the light-incident surface, the photodiode array 1 convertsthe incident light into electric signals.

The scintillator panel 31 is mounted on the back surface side (incidentsurface side) of the photodiode array 1. Since the photodiode array 1 isprovided with the aforementioned resin film 6, the back surface of thescintillator panel 31, i.e., the light exit surface 31 a is kept out ofdirect contact with the corresponding regions of the photodiodes 4. Thespace between the light exit surface 31 a of the scintillator panel 31and the resin film 6 is filled with an optical resin 35 having arefractive index set so as to sufficiently transmit the light. Thisoptical resin 35 allows the light from the scintillator panel 31 toefficiently enter the photodiode array 1. This optical resin 35 can beselected from epoxy resin, acrylic resin, urethane resin, siliconeresin, fluororesin, etc. with the property of transmitting the lightfrom the scintillator panel 31, or may be one of composite materials ofthese resins.

In an operation of bonding the photodiode array 1 onto an unrepresentedmounting wiring board, the flat collet holds the photodiode array 1under suction. However, since the photodiode array 1 is provided withthe aforementioned resin film 6, the sticking surface of the flat colletis kept out of direct contact with the corresponding regions of therespective photodiodes 4. When the scintillator panel 31 is mounted, itslight exit surface 31 a is not in direct contact with the correspondingregions of the photodiodes 4, either. Therefore, the radiation detector50 having such photodiode array 1 and scintillator panel 31 is able toprevent occurrence of noise, dark current, etc. due to damage of thecorresponding regions in the mounting. In consequence, the radiationdetector 50 is able to accurately perform photodetection and, in turn,to accurately perform radiation detection.

Fourth Embodiment

Next, a radiation detector according to the fourth embodiment will bedescribed.

FIG. 23 is a view showing a sectional configuration of radiationdetector 55 according to the present embodiment. This radiation detector55 has a scintillator panel 31, and the aforementioned photodiode array41. The scintillator panel 31 is arranged opposite to the light-incidentsurface of photodiode array 41, i.e., opposite to the surface where theresin film 6 is provided in the photodiode array 41.

The scintillator panel 31 is mounted on the back surface side (incidentsurface side) of the photodiode array 41. Since the photodiode array 41is provided with the aforementioned resin film 6, the back surface ofthe scintillator panel 31, i.e., the light exit surface 31 a is kept outof direct contact with the corresponding regions of the photodiodes 4.The clearance between the light exit surface 31 a of the scintillatorpanel 31 and the resin film 6 is filled with an optical resin 35 havinga refractive index set in consideration of such characteristics as tosufficiently transmit light. This optical resin 35 allows the light fromthe scintillator panel 31 to efficiently enter the photodiode array 41.

In an operation of bonding the photodiode array 41 to an unrepresentedmounting wiring board, the flat collet holds the photodiode array 41under suction. However, since the photodiode array 41 is provided withthe aforementioned resin film 6, the sticking surface of the flat colletis not in direct contact with the corresponding regions of therespective photodiodes 4. When the scintillator panel 31 is mounted, itslight exit surface 31 a is also kept out of direct contact with thecorresponding regions of the photodiodes 4. Therefore, the radiationdetector 55 having such photodiode array 41 and scintillator panel 31 isable to prevent occurrence of noise, dark current, etc. due to damage ofthe corresponding regions in the mounting. In consequence, the radiationdetector 55 is able to accurately perform photodetection and, in turn,to accurately perform radiation detection.

The invention accomplished by the Inventors was specifically describedabove on the basis of the embodiments thereof, but the present inventionis by no means intended to be limited to the above embodiments. Forexample, the resin film 6 may be provided directly on the n-type siliconsubstrate 3, 43, or may be provided through a stricture such as the ARfilm 24 thereon.

INDUSTRIAL APPLICABILITY

The present invention is applicable to X-ray CT scanners andradiographic image taking systems.

1. A radiation detector comprising: a photodiode array comprising asemiconductor substrate, wherein a plurality of photodiodes are formedin array on an opposite surface side to an incident surface of light tobe detected, in the semiconductor substrate, and wherein a resin filmfor transmitting the light to be detected and for functioning as acushion layer is provided so as to cover at least regions correspondingto regions where the photodiodes are formed, on a side of the incidentsurface of the light to be detected, in the semiconductor substrate; ascintillator panel arranged opposite to the incident surface of thelight to be detected, in the photodiode array, and arranged to emitlight with incidence of radiation; and an optical resin provided so asto fill a space between a light exit surface of the scintillator paneland the resin film.
 2. The radiation detector according to claim 1,wherein a plurality of depressions having a predetermined depth areformed in array on the opposite surface side to the incident surface ofthe light to be detected, in the semiconductor substrate, and whereineach said photodiode is formed in a bottom portion of the associateddepression.
 3. The radiation detector according to claim 1, wherein theresin film is provided so as to cover the entire incident surface of thelight to be detected, in the semiconductor substrate.
 4. The radiationdetector according to claim 1, wherein the semiconductor substrate isprovided with an impurity region between the photodiodes adjacent toeach other, for separating the photodiodes from each other.
 5. Theradiation detector according to claim 1, wherein ahigh-impurity-concentration layer of the same conductivity type as thesemiconductor substrate is formed on the incident surface side of thelight to be detected, in the semiconductor substrate.
 6. The radiationdetector according to claim 1, wherein a thickness of the resin film isset in a range of 1-50 μm.
 7. The radiation detector according to claim1, further comprising an anti-reflection film provided on the incidentsurface of the light to be detected, in the semiconductor substrate,wherein the resin film is provided on the anti-reflection film.